Increase of CdZnTe Crystal Radiation Hardness by Laser Radiation

The 9th International Conference on Global Research and Education: Inter Academia 2010 : Digest 2010
Artūrs Medvids, Aleksandrs Mičko, Jānis Barloti, Yuriy Naseka, Ernesto Diéguez

Decrease of  - radiation influence on intensity of A0X exiton band in photoluminescence spectrum of CdZnTe crystals previously irradiated by second harmonic of Nd:YAG laser is observed. This effect of suppression of Cd vacancies (acceptors) generated by  - radiation, which means increase of radiation hardness of the crystal is explained by formation of thin CdTe film layer under action of laser radiation.

Atslēgas vārdi
radiation, cdznte, semiconductor, laser

Medvids, A., Mičko, A., Barloti, J., Naseka, Y., Diéguez, E. Increase of CdZnTe Crystal Radiation Hardness by Laser Radiation. No: The 9th International Conference on Global Research and Education: Inter Academia 2010 : Digest, Latvija, Riga, 9.-12. augusts, 2010. Riga: RTU Publishing House, 2010, 264.-266.lpp. ISBN 978-9934-10-046-8.

Publikācijas valoda
English (en)