P-n Junction Formation in ITO/p-Si Structure by Powerful Laser Radiation for Solar Cells Applications
The 9th International Conference on Global Research and Education: Inter Academia 2010: Digest
2010
Artūrs Medvids,
Pāvels Onufrijevs,
Edvīns Daukšta,
L Blumbrka,
Jānis Barloti,
A Ulyashin,
I Dmytruk,
I Pundyk
The research report is devoted to the development of a new method of nanostructures formation in ITO/p-Si/Al structure with powerful laser radiation and study of its optical and electrical properties for solar cells applications. It was showed that after the structure irradiation by Nd:YAG laser second harmonic, dark current voltage characteristics become diode-like. Increase of ITO/p-Si/Al structure power after irradiation by laser, using photocurrent voltage characteristic method, was shown.
Atslēgas vārdi
P-n junction, ITO/p-Si, laser radiation, solar cells
Medvids, A., Onufrijevs, P., Daukšta, E., Blumbrka, L., Barloti, J., Ulyashin, A., Dmytruk, I., Pundyk, I. P-n Junction Formation in ITO/p-Si Structure by Powerful Laser Radiation for Solar Cells Applications. No: The 9th International Conference on Global Research and Education: Inter Academia 2010: Digest, Latvija, Riga, 9.-12. augusts, 2010. Riga: RTU Publishing House, 2010, 270.-271.lpp. ISBN 978-9934-10-046-8.
Publikācijas valoda
English (en)