Stresses Relaxation in the Si-SiO2 System and Its Influence on the Interface Properties

Global Journal of Science Frontier Research: B 2016
Daniel Kropman, Tõnu Laas, Viktor Seeman, Artūrs Medvids

The results of the investigation of stresses relaxation by strain by means of EPR spectra, IR absorption spectra, SEM and samples deflection are presented. It has been shown that stresses relaxation mechanism depended on the oxidation condition: temperature, cooling rate, oxide thickness. In the Si-SiO2-Si3N4 system the stresses relaxation by the strain occur due to the opposite sign of the thermal expansion coefficient of Si-SiO2 and Si3N4 on Si. Laser irradiation allows to modify the system stresses.

Atslēgas vārdi
Si-SiO2 interface, stress relaxation, EPR, SEM.
Hipersaite
https://journalofscience.org/index.php/GJSFR/article/view/1971

Kropman, D., Laas, T., Seeman, V., Medvids, A. Stresses Relaxation in the Si-SiO2 System and Its Influence on the Interface Properties. Global Journal of Science Frontier Research: B, 2016, Vol.17, Iss.1, 1.-7.lpp. ISSN 0975-5896. e-ISSN 2249-4626.

Publikācijas valoda
English (en)