Strain Relaxation Mechanism in the Si-SiO2 System and Its Influence on the Interface Properties

Physica B: Condensed Matter 2009
Daniel Kropman, E. Mellikov, A. Opik, K. Lott, O. Volobueva, T. Kärner, I. Heinmaa, T. Laas, Artūrs Medvids

The results of the investigation of stresses relaxation by strain by means of EPR spectra, IR absorption spectra, SEM and samples deflection are presented. It has been shown that stresses relaxation mechanism depended on the oxidation condition: temperature, cooling rate, oxide thickness. In the Si-SiO2-Si3N4 system the stresses relaxation by the strain occur due to the opposite sign of the thermal expansion coefficient of SiO2 and Si3N4 on Si. Laser irradiation allows to modify the system stresses.

Atslēgas vārdi
Si n-type; strain relaxation; point defects
DOI
10.1016/j.physb.2009.08.279
Hipersaite
http://www.sciencedirect.com/science/article/pii/S0921452609010321

Kropman, D., Mellikov, E., Opik, A., Lott, K., Volobueva, O., Karner, T., Heinmaa, I., Laas, T., Medvids, A. Strain Relaxation Mechanism in the Si-SiO2 System and Its Influence on the Interface Properties. Physica B: Condensed Matter, 2009, Vol.404, Iss.23–24, 5153.-5155.lpp. ISSN 0921-4526. Pieejams: doi:10.1016/j.physb.2009.08.279

Publikācijas valoda
English (en)