Interface of Silicon Nitride Nanolayers with Oxygen Deficiency
2018 16th Biennial Baltic Electronics Conference (BEC 2018): Proceedings
2019
Jurijs Dehtjars,
Līga Avotiņa,
Gennady Enichek,
Marina Romanova,
Ben Schmidt,
Evgeny Shulzinger,
Hermanis Sorokins,
Aleksandrs Viļķens,
Aleksandrs Zaslavski
Multilayer Si3N4 consisting of Si3N4 nanolayers with the total thickness 60 nm was deposited layer-by-layer in a low-pressure chemical vapor deposition process. Compared with the single-layer Si3N4, the multilayer Si3N4 had one-third less oxygen concentration at the interfaces. This decreased density of electrically active centers of oxygen traps and improved quality of nanocapacitors with multilayer Si3N4 dielectric.
Atslēgas vārdi
silicon nitride, nanolayer, oxygen
DOI
10.1109/BEC.2018.8600964
Hipersaite
https://ieeexplore.ieee.org/document/8600964
Dehtjars, J., Avotiņa, L., Enichek, G., Romanova, M., Schmidt, B., Shulzinger, E., Sorokins, H., Viļķens, A., Zaslavski, A. Interface of Silicon Nitride Nanolayers with Oxygen Deficiency. No: 2018 16th Biennial Baltic Electronics Conference (BEC 2018): Proceedings, Igaunija, Tallinn, 8.-10. oktobris, 2018. Piscataway: IEEE, 2019, 43.-46.lpp. ISBN 978-1-5386-7313-3. e-ISBN 978-1-5386-7312-6. ISSN 1736-3705. e-ISSN 2382-820X. Pieejams: doi:10.1109/BEC.2018.8600964
Publikācijas valoda
English (en)