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Publikācija: Charge Trap Analysis of Nanolayer Si3N4 and SiO2 by Electron Irradiation Assisted Photoelectron Emission

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Nosaukums oriģinālvalodā Charge Trap Analysis of Nanolayer Si3N4 and SiO2 by Electron Irradiation Assisted Photoelectron Emission
Pētniecības nozare 1. Dabaszinātnes
Pētniecības apakšnozare 1.3. Fizika un astronomija
Pētniecības platforma Materiāli, procesi un tehnoloģijas
Autori Jurijs Dehtjars
Gennady Enichek
Marina Romanova
Ben Schmidt
Aleksandrs Viļķens
Thomas Alexander Yager
Alexandr Zaslavski
Atslēgas vārdi Charge traps, FTIR, Photoelectron emission, Silicon dioxide, Silicon nitride, XPS
Anotācija An electron irradiation assisted photoelectron emission technique was developed to study charge traps for nanolayered Si3N4 and SiO2. Sharp emission peaks were induced by electron irradiation, with characteristic energies revealing their microscopic origins. Trap energies, originating from SiO2, were observed to shift depending on the electron irradiation dose and the thickness of Si3N4 nanolayers. Improved understanding of the characteristics of these defects can be informative towards the development of high performance nanocapacitor devices, in addition to furthering understanding of non-volatile memory devices.
DOI: 10.1016/j.physb.2020.412123
Hipersaite: https://www.sciencedirect.com/science/article/abs/pii/S0921452620301356?via%3Dihub 
Atsauce Dehtjars, J., Enichek, G., Romanova, M., Schmidt, B., Viļķens, A., Yager, T., Zaslavski, A. Charge Trap Analysis of Nanolayer Si3N4 and SiO2 by Electron Irradiation Assisted Photoelectron Emission. Physica B: Condensed Matter, 2020, Vol. 586, 412123.-412123.lpp. ISSN 0921-4526. Pieejams: doi:10.1016/j.physb.2020.412123
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ID 30837